Vanadium doping patterns in ZnO lattices in the lattice compatibility theory framework
Identifieur interne : 000241 ( Main/Repository ); précédent : 000240; suivant : 000242Vanadium doping patterns in ZnO lattices in the lattice compatibility theory framework
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Abstract
We investigate vanadium doping patterns in ZnO thin films prepared by spray pyrolysis for different controlled concentrations (1-5%). Lattice-scale analyses are carried out in the lattice compatibility theory (LCT) framework. Differences in vanadium doping behaviors for different concentrations are discussed in terms of Urbach tailing and the Faraday effect, as well as the intrinsic lattice patterns of the doping agent.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Vanadium doping patterns in ZnO lattices in the lattice compatibility theory framework</title><author><name sortKey="Gherouel, D" uniqKey="Gherouel D">D. Gherouel</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Unité de Physique des Dispositifs à Semi-conducteurs, Faculte des Sciences de Tunis, Tunis El Manar University</s1><s2>2092 Tunis</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>2092 Tunis</wicri:noRegion></affiliation></author><author><name sortKey="Dabbous, S" uniqKey="Dabbous S">S. Dabbous</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Unité de Physique des Dispositifs à Semi-conducteurs, Faculte des Sciences de Tunis, Tunis El Manar University</s1><s2>2092 Tunis</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>2092 Tunis</wicri:noRegion></affiliation></author><author><name sortKey="Boubaker, K" uniqKey="Boubaker K">K. Boubaker</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>École Supérieure de Sciences et Techniques de Tunis (ESSTT), Université de Tunis</s1><s2>5100 Tunis</s2><s3>TUN</s3><sZ>3 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>5100 Tunis</wicri:noRegion></affiliation></author><author><name sortKey="Amlouk, M" uniqKey="Amlouk M">M. Amlouk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Unité de Physique des Dispositifs à Semi-conducteurs, Faculte des Sciences de Tunis, Tunis El Manar University</s1><s2>2092 Tunis</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Tunisie</country><wicri:noRegion>2092 Tunis</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0363143</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0363143 INIST</idno><idno type="RBID">Pascal:13-0363143</idno><idno type="wicri:Area/Main/Corpus">000428</idno><idno type="wicri:Area/Main/Repository">000241</idno></publicationStmt><seriesStmt><idno type="ISSN">1369-8001</idno><title level="j" type="abbreviated">Mater. sci. semicond. process.</title><title level="j" type="main">Materials science in semiconductor processing</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Compatibility</term><term>Doped materials</term><term>Doping</term><term>Faraday effect</term><term>Indium addition</term><term>Lattice theory</term><term>Optical characteristic</term><term>Optical properties</term><term>Spray coating</term><term>Spray pyrolysis</term><term>Thin film</term><term>Urbach rule</term><term>Vanadium</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Dopage</term><term>Théorie sur réseau</term><term>Compatibilité</term><term>Dépôt projection</term><term>Addition indium</term><term>Règle Urbach</term><term>Effet Faraday</term><term>Caractéristique optique</term><term>Propriété optique</term><term>Vanadium</term><term>Oxyde de zinc</term><term>Couche mince</term><term>Matériau dopé</term><term>7867</term><term>ZnO</term><term>Pyrolyse par projection</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term><term>Vanadium</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We investigate vanadium doping patterns in ZnO thin films prepared by spray pyrolysis for different controlled concentrations (1-5%). Lattice-scale analyses are carried out in the lattice compatibility theory (LCT) framework. Differences in vanadium doping behaviors for different concentrations are discussed in terms of Urbach tailing and the Faraday effect, as well as the intrinsic lattice patterns of the doping agent.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1369-8001</s0></fA01><fA03 i2="1"><s0>Mater. sci. semicond. process.</s0></fA03><fA05><s2>16</s2></fA05><fA06><s2>6</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Vanadium doping patterns in ZnO lattices in the lattice compatibility theory framework</s1></fA08><fA11 i1="01" i2="1"><s1>GHEROUEL (D.)</s1></fA11><fA11 i1="02" i2="1"><s1>DABBOUS (S.)</s1></fA11><fA11 i1="03" i2="1"><s1>BOUBAKER (K.)</s1></fA11><fA11 i1="04" i2="1"><s1>AMLOUK (M.)</s1></fA11><fA14 i1="01"><s1>Unité de Physique des Dispositifs à Semi-conducteurs, Faculte des Sciences de Tunis, Tunis El Manar University</s1><s2>2092 Tunis</s2><s3>TUN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>École Supérieure de Sciences et Techniques de Tunis (ESSTT), Université de Tunis</s1><s2>5100 Tunis</s2><s3>TUN</s3><sZ>3 aut.</sZ></fA14><fA20><s1>1434-1438</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>2888A</s2><s5>354000501052880120</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>56 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0363143</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Materials science in semiconductor processing</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>We investigate vanadium doping patterns in ZnO thin films prepared by spray pyrolysis for different controlled concentrations (1-5%). Lattice-scale analyses are carried out in the lattice compatibility theory (LCT) framework. Differences in vanadium doping behaviors for different concentrations are discussed in terms of Urbach tailing and the Faraday effect, as well as the intrinsic lattice patterns of the doping agent.</s0></fC01><fC02 i1="01" i2="X"><s0>001D11C06</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15R</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H20L</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H67</s0></fC02><fC02 i1="05" i2="X"><s0>240</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Dopage</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Doping</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="GER"><s0>Dopen</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Doping</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Théorie sur réseau</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Lattice theory</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Compatibilité</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Compatibility</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="GER"><s0>Kompatibilitaet</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Compatibilidad</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Dépôt projection</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Spray coating</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="GER"><s0>Spritzbeschichten</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Depósito proyección</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Addition indium</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Indium addition</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="GER"><s0>Indiumzusatz</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Adición indio</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Règle Urbach</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Urbach rule</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Regla Urbach</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Effet Faraday</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Faraday effect</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="GER"><s0>Faraday Effekt</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Efecto Faraday</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Caractéristique optique</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Optical characteristic</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Característica óptica</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Propriété optique</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Optical properties</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="GER"><s0>Optische Eigenschaft</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Propiedad óptica</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Vanadium</s0><s2>NC</s2><s2>FX</s2><s5>22</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Vanadium</s0><s2>NC</s2><s2>FX</s2><s5>22</s5></fC03><fC03 i1="10" i2="X" l="GER"><s0>Vanadium</s0><s2>NC</s2><s2>FX</s2><s5>22</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Vanadio</s0><s2>NC</s2><s2>FX</s2><s5>22</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Oxyde de zinc</s0><s5>23</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Zinc oxide</s0><s5>23</s5></fC03><fC03 i1="11" i2="X" l="GER"><s0>Zinkoxid</s0><s5>23</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Zinc óxido</s0><s5>23</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Couche mince</s0><s5>24</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Thin film</s0><s5>24</s5></fC03><fC03 i1="12" i2="X" l="GER"><s0>Duennschicht</s0><s5>24</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Capa fina</s0><s5>24</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>46</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Doped materials</s0><s5>46</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>7867</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>ZnO</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Pyrolyse par projection</s0><s4>CD</s4><s5>96</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Spray pyrolysis</s0><s4>CD</s4><s5>96</s5></fC03><fC07 i1="01" i2="X" l="FRE"><s0>Composé II-VI</s0><s5>10</s5></fC07><fC07 i1="01" i2="X" l="ENG"><s0>II-VI compound</s0><s5>10</s5></fC07><fC07 i1="01" i2="X" l="SPA"><s0>Compuesto II-VI</s0><s5>10</s5></fC07><fN21><s1>343</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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